NEW HIGH GAIN, HIGH POWER ADDED EFFICIENCY X-AND Ku-BAND GaAs FETs FROM TOSHIBA FOR MICROWAVE RADIOS AND BLOCK

NEW HIGH GAIN, HIGH POWER ADDED EFFICIENCY X-AND Ku-BAND GaAs FETs FROM TOSHIBA FOR MICROWAVE RADIOS AND BLOCK UP-CONVERTERS

Three Amplifiers Optimized for Power Added Efficiency Provide Energy Savings and Higher Gain

IRVINE, Calif., June 9, 2009 — Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with three new devices optimized for power added efficiency. The Power Added Efficiency enhanced GaAs FETs are targeted for microwave radios and block up converters (BUCs) and will be exhibited in TAEC’s booth, #623, at the 2009 IEEE MTT-S International Microwave Symposium, which will be held June 7 through 12 in Boston, Massachusetts.

A new X-Band GaAs FET for microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications, the TIM1011-8UL A , operate s in the 10.7 to 11.7 GHz1 range. The TIM1011-8ULA has output power at 1dB gain compression point of 8W, or 39.5dBm (typ.), linear gain of 9.0 dB (typ.) and power added efficiency of 39 percent. T oshiba commercially launched a similar product, the TIM1011-8UL, in 2008. The new device is in a different package, a 2-11C1B, to support existing customers using legacy products.

For Ku-band , Toshiba has added two power amplifiers. The first, TIM1213-8ULA operates in the 12.7 to 13.2 GHz range , and while the other, TIM1314-15UL, operates in the 13.75 to 14.5 GHz range. TIM1213-8ULA is targeted for use in microwave radios for microwave links and TIM1314-15UL is optimized for satellite block up-converter (BUCs) applications, for very small aperture terminals (VSAT) and solid-state power amplifiers (SSPAs ). The TIM 1213-8ULA has output power at 1dB gain compression point of 39.5 dBm (typ.), gain of 8.0dB (typ.) and power efficiency of 35 percent. The TIM 1314-15 UL features output power at 1dB gain added compression point of 42dBm (typ.), gain of 7.0dB (typ.) and power added efficiency of 32 percent.

“Following the launch of our “UL” Power Added Efficiency enhanced 2W and 8W devices for X-band in 2008, Toshiba is expanding the product family with another X-band amplifier as well as two long-awaited devices in the Ku-band frequency range. With energy-saving features associated with higher gain, we believe that these amplifiers will help our customers design more advanced telecommunication systems,” said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC’s Discrete Business Unit.

Technical Specifications

Product Characteristics TIM1011-ULA TIM1213-ULA TIM1314-5UL

Frequency 10.7- 11.7GHz 12.7 – 13.2GHz 13.75-14.5GHz

Band X-Band Ku-Band Ku-Band

Output Power, P1dB(typ.) 8W 8W 15 W

Gain, G1dB(typ.) 10.0 dB 10.0 dB 7.5 dB

Power Efficiency 36% 41% 36%

Pricing and Availability

Samples of the Toshiba Power Added Efficiency GaAs FET family are available now. For pricing, please contact your Toshiba representative.

http://www.toshiba.com/taec/news/press_releases/2009/mwrf_09_569.jsp ■