Nexperia has launched its first power GaN FETs in e-mode (enhancement mode) configuration for low (100/150 V) and high (650 V) voltage applications. With the addition of the seven new e-mode devices, the company said it is the only supplier to offer both cascode and e-mode GaN FETs.
(Source: Nexperia)
The new portfolio includes five 650-V rated GaN FETs (with RDS(on) values between 80 mΩ and 190 mΩ) in DFN 5 × 6-mm and DFN 8 × 8-mm packages. They improve power conversion efficiency in high-voltage, low-power (<650 V) datacom/telecom, consumer charging, solar and industrial applications. They can also be used in brushless DC motors and micro server drives.
The low-voltage devices include a 100-V (3.2 mΩ) GaN FET in a WLCSP8 package and a 150-V (7 mΩ) device in a FCLGA package. These devices target a variety of low-voltage (<150 V), high-power applications. These applications include delivering more efficient DC/DC converters in data centers, faster charging (e-mobility and USB-C), smaller LiDAR transceivers, lower noise class D audio amplifiers and more power dense consumer devices like mobile phones, laptop, and games consoles, said Nexperia.
The new GaN FETs are fabricated on an 8” wafer-line for increased capacity, said Nexperia. They are qualified for industrial applications according to the JEDEC standard.
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