Nexperia launches next-gen 650-V GaN devices

By Gina Roos, editor-in-chief

Nexperia has released a new range of GaN FET devices that feature next-generation high-voltage GaN HEMT H2 technology, targeting automotive, 5G, and data center applications. The devices are housed in standard TO-247 and the company’s proprietary CCPAK surface-mount packaging with a copper clip. The devices simplify application design thanks to the cascode configuration that enables the use of standard silicon MOSFET drivers and eliminates the need for complicated controls, said Nexperia.

In addition, the devices offer superior switching figures of merit (FOMs) and on-state performance with improved stability, said the company.

The new GaN technology uses through-epi vias that reduce defects and shrink die size by about 24%. The R_DS(on)  is also reduced to 41 mΩ (max., 35 mΩ typ. at 25°C) with the initial release in traditional TO-247 packages, with high threshold voltage and low diode forward voltage. Nexperia said that R_DS(on)  will further reduce to 39 mΩ (max., 33 mΩ typ. at 25 °C) with CCPAK surface-mount versions. Both versions meet AEC-Q101 for automotive applications.

The new devices address the need for high-efficiency, high power conversion at 650 V and 30- to 40-mΩ R_DS(on) for applications such as on-board chargers, DC/DC converters, and traction inverters in electric vehicles, as well as industrial power supplies in the 1.5- to 5-kW range for titanium-grade rack-mounted telecoms, 5G, and data centers.

The CCPAK surface-mount packaging adopts Nexperia’s copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves reliability. CCPAK GaN FETs are available in top- or bottom-cooled configurations. The 650-V GAN041-650WSB (TO-247 package) and the GAN039-650NBB (CCPAK) are sampling now.