Nexperia unveils its first high-power SiC Schottky diode

Nexperia has entered the high-power silicon-carbide (SiC) diode market with the introduction of a family of 650-V, 10-A SiC Schottky diodes. The SiC Schottky diode family joins the company’s existing portfolio of gallium nitride (GaN) FETs.

The SiC Schottky diode is an industrial-grade device with 650-V repetitive peak reverse voltage (V_RRM) and 10-A continuous forward current (I_F), translating into high efficiency and low energy loss for power conversion applications. It also features a high-voltage compliant real 2-pin (R2P) package with a higher creepage distance, and is available in a choice of surface mount (DPAK R2P and D2PAK R2P) or through-hole (TO-220-2, TO-247-2) packages.

Engineering samples are available on request with a full product release planned for the second quarter of 2022. Nexperia plans to expand its SiC diode portfolio, which will be comprised of 72 products with voltage levels of 650 V and 1200 V and currents in the range of 6 A to 20 A. Initial target industrial and consumer applications include switch-mode power supplies, AC/DC and DC/DC converters, battery charging infrastructure, uninterruptible power supplies, and photovoltaic inverters.

The company also plans to develop automotive-grade devices for use in vehicle electrification applications such as on-board chargers (OBC), inverters, and high-voltage DC/DC converters. The PSC1065H (-J/-K/-L) is the first in a portfolio of SiC Schottky diodes that Nexperia is developing for automotive and industrial markets.