NXP unveils 65-V LDMOS RF transistors for smart industrial applications

By Gina Roos, editor-in-chief

NXP Semiconductors N.V. expanded its RF power transistor product offering that features the 65-V laterally diffused metal oxide semiconductor (LDMOS) silicon technology. The company said that 65-V LDMOS “enables more integrated, highly reliable Industry 4.0 systems” with a high level of energy management thanks to higher power density, a lower current level, and wider safety margins provided by the new devices.

The MRFX series of 65-V LDMOS devices targets industrial, scientific, and medical (ISM) applications such as laser generation, plasma processing, magnetic-resonance imaging, skin treatment, and diathermy as well as radio and TV broadcast transmitters. NXP said that the devices are also well-suited for the growing segment of RF energy in which transistors replace vacuum tubes in industrial heating machines.

NXP unveiled 65-V LDMOS last year with the introduction of the MRFX1K80H device, capable of 1,800-W continuous wave (CW) in an air-cavity ceramic package. The company has added several new reference circuits for the MRFX1K80H at 27, 64, 81.36, 87.5–108, 128, 175, 174–230, and 230 megahertz (MHz)

The new parts include:
 

• MRFX1K80 N : 1,800-W over-molded plastic package version of the MRFX1K80H device, enabling a 30% lower thermal resistance (0.06°C/W). All 27-, 64-, 81.36-, 87.5- to 108-, 128-, 175-, 174- to 230-, and 230-MHz reference circuits for the MRFX1K80H are available.
• MRFX600 H : 600-W solution in a small footprint, featuring a 12.5-Ω output impedance to fit a 4:1 output transformer. The MRFX600H transistor is released, supported by 87.5- to 108-MHz and 230-MHz reference circuits.
• MRFX035 H : 35-W driver of previous final-stage devices. It offers a 50-Ω output impedance for the most compact board layouts. The MRFX035H transistor is available now for 1.8- to 54-MHz, 30- to 512-MHz, and 230-MHz reference circuits.

All MRFX devices are part of NXP’s 15-year Product Longevity Program.