Onsemi unveils 1700-V SiC devices

Onsemi has launched its EliteSiC family of silicon-carbide devices. The company will showcase three new devices – the 1700-V EliteSiC MOSFET and two 1700-V avalanche-rated EliteSiC Schottky diodes – at the Consumer Electronics Show (CES) in Las Vegas. Delivering high efficiency, the new SiC devices target energy infrastructure and industrial drive applications.

(Source: Onsemi)

The 1700-V EliteSiC MOSFET, the NTH4L028N170M1, offers higher breakdown voltage (BV) SiC solutions, which are required for high-power industrial applications.

Onsemi said renewable energy applications continue to move to higher voltages with solar systems from 1100-V to 1500-V DC buses, which require MOSFETs with a higher BV. The 1700-V EliteSiC MOSFET offers a maximum Vgs range of -15 V/25 V, making it suitable for fast switching applications where gate voltages are increasing to -10 V, which provides increased system reliability, added the company.

At a test condition of 1200 V at 40 A, the 1700-V EliteSiC MOSFET achieves a gate charge (Qg) of 200 nC compared to equivalent competitive devices that are closer to 300 nC, according to the company. “A low Qg is critical to achieving high efficiency in fast switching, high-power renewable energy applications,” said onsemi.

The two 1700-V avalanche-rated EliteSiC Schottky diodes, the NDSH25170A and NDSH10170A, deliver stable high-voltage operation at elevated temperatures while offering high efficiency enabled by SiC, said onsemi.

The EliteSiC Schottky diode devices with a BV rating of 1700 V offer improved margin between the maximum reverse voltage (VRRM) and the peak repetitive reverse voltage of the diode, said the company.

The new devices also are said to provide excellent reverse leakage performance with a maximum reverse current (IR) of 40 µA at 25°C and 100 µA at 175°C . Onsemi said these ratings are significantly better than competitive devices that are often rated at 100 µA at 25°C.

Onsemi is exhibiting at CES 2023, January 5-8, in Las Vegas, NV.