The semiconductor technology news at PCIM was more about how to squeeze more out of your silicon than to start new projects with SiC and GaN. However, having said that, more companies than ever before were making sure you knew about their connection to SiC and GaN.
Cree introduced a new family of 900-V SiC MOSFETs; and demonstrated how the SiC technology enables smaller, lower cost, and more efficient power systems capable of switching at higher frequencies and operating at higher temperatures. Demonstrations included a 33 kg, 50-kW solar inverter that is based on the company’s latest SiC modules and is one-fifth the size and weight of equivalent, industry-leading silicon-based inverters, and capable of achieving 99% efficiency. They had a demo for a 220-W SiC-based LED power supply, and another for a power stack that demonstrates how Cree’s 1.2-kV, 300-A SiC modules can revitalize older, IGBT-based systems. Built on Cree’s SiC planar technology, the new 900-V MOSFET platform expands the product portfolio to address design challenges common to new and evolving application segments in which a higher dc-link voltage is desirable. The lead product (C3M0065090J) features the lowest on-resistance rating (65mΩ) of any 900-V MOSFET device currently available on the market. Moreover, in addition to the industry standard TO247-3 and TO220-3 packages, the new device is also offered in a low-impedance D2Pak-7L surface mount package with a Kelvin connection to help minimize gate ringing.
ON Semiconductor introduced a state-of-the-art 80 A Power Integrated Module (PIM) with performance that targets demanding uninterruptable power supplies, industrial variable frequency drives, and solar inverter applications. The NXH80T120L2Q0PG PIM module is configured in 1200-V, 80-A half-bridge and 600-V, 50-A neutral point clamp that attains 98% efficiency. The configurable package platform employs high-power direct-bonded-copper substrate technology along with proprietary press-fit pins. ON Semo demonstrations include the industry’s first current-mode LLC controller, the NCP1399, highlighting the safety features and benefits inherent to a current-mode control approach. The power supply reference design will incorporate the NCP1399 along with ON Semiconductor’s NCP4810 X2 capacitor discharger, NCP1602 power factor controller , and NCP4305 synchronous rectification controller. This system solution is predominantly aimed at power supplies for all-in-one computers and large LED TVs, as well as ultra-high density power adapters.
Vicor introduced the first products in its Vicor Integrated Adapter (VIA) package. It includes the VIA PFM, which is an isolated ac/dc converter with power factor correction. Another is the VIA BCM, which is an isolated bus converter that operates from a 380 Vdc and delivers an isolated 48 V output. It is provided in a 9-mm high module that incorporates EMI filtering, transient protection and in-rush current limiting. It can be paralleled to provide multi-kW array, provide bi-directional power processing, and supports PMBus communication capabilities. The modules suit high-voltage dc distribution in datacenters, microgrids, and ATE systems. Also introduced was the ZVS regulator series. This new zero-voltage switching PoL PI3542, PI3543, PI3545, and PI3546 buck regulators that enable 48-V to 2.5 V in one step. It offers 96% efficiency when converting 48 to 12-V, and 93% to 5 V. It is offered in a 10 x 10 x 2.5-mm LGA System in Package (SiP) module.
Toshiba introduced a line MOSFETs from its latest, U-MOS IX-H trench process that is touted to provide high efficiency at all loads by limiting on-resistance and improving switching efficiency by reducing output charge. The family is available in an ultracompact, thermally efficient DSOP package. One of its claims to fame is much improved heat dissipation through dual-sided cooling. The family was first introduced with a 40-V device and is now offered with popular 30 and 60-V devices.
Power Integrations launched its 2SC0115T2A0-12 dual-channel gate-driver core for 90 kW to 500 kW inverters and converters. Leveraging SCALE-2+ integrated circuit and isolated transformer technology for dc/dc power and switching signal transmission, the new driver core improves system reliability and performance by eliminating the need for an opto-coupler. The driver core’s reinforced electrical isolation targets systems with a working voltage of 900 V, which is typical for 1200 V IGBT modules and complies with the PD2 and OV II requirements of IEC 60664-1 and IEC 61800-5-1. The 2SC0115TA0-12 gate-driver core supports modules up to 2,400 A and switching frequencies of up to 50 kHz. The company also announced a new reference design (DER-479) demonstrating an industrial power supply using the company’s LinkSwitch-4 family of CV/CC primary-side regulated switcher ICs with a 1,200-V bipolar junction transistor (BJT). The design supports 440 Vac line inputs and features three outputs that combine to provide up to 11 W of constant-voltage dc-power.
GaN Systems introduced the GS65516T, the latest addition to its range of E-mode GaN-on-Silicon high power transistors based on its three core proprietary technologies. The new GaN high-power enhancement-mode device boasts the highest current capability on the market at 60 A. It is a 650-V enhancement-mode power switch that features a proprietary topside cooling configuration that allows the device to be cooled using familiar and conventional heat sink or fan cooling techniques. It uses the company’s Island Technology die design, is packaged in low inductance and thermally efficient GaNPX packaging and measures 9.0 x 7.6 x 0.45-mm. It also features reverse current capability, integral source sense and zero reverse recovery loss. Dual gate pads help design engineers achieve optimal board layout. The device suits high frequency, high efficiency power conversion applications such as on-board battery chargers, 400-V dc/dc conversion, inverters, uninterruptable power supplies and motor drives, ac/dc power supplies (PFC and primary) and small form factor power adapters.
Panasonic announced that it will launch the industry's smallest enhancement-mode GaN power transistors package. The product encapsulates GaN into an 8 x 8 dual-flat no-lead (DFN) surface-mount package, making it easy to mount on small areas where conventional mounting is difficult, thus contributing to a reduction in power consumption of industrial and consumer electronics equipment. The breakdown voltage of the transistors is 600 V in the enhancement mode, and the products have achieved a high-speed switching of 200 V/ns and an on-resistance of 54 to 154 mΩ. The company will start shipping samples of the 10-A type (PGA26E19BV) and 15-A type (PGA26E08BV) in July 2015.
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