PCIM roundup: Power ICs address efficiency and power density

At PCIM Europe 2024, power semiconductor manufacturers unveiled their latest innovations and advances in wide-bandgap (WBG) technologies, including silicon carbide (SiC) and gallium nitride (GaN), and silicon (Si) power devices. While Si power devices still dominate the power electronics market, there is significant adoption of SiC and GaN power ICs in a variety of applications, including e-mobility, data centers, industrial control and renewable energy.

Many of these new products address the power designers’ most important objectives in component selection: efficiency, cost, reliability, size and operating temperature range. A newly released Power Electronics Survey, conducted by Power Electronics News, finds that the most critical objective is efficiency, according to 81% of respondents, followed by cost (76%), reliability (69%), size (54%) and operating temperature range (47%).

Many of these products also tackle the power designers’ biggest pain points—thermal management, electromagnetic interference (EMI), high-voltage design and power density. The survey finds the biggest challenge is thermal management, according 71% of survey respondents. This is followed by EMI (68%), control system design (50%), circuit layout (47%) power density (46%) and high-voltage design (45%).

Over the next decade, power designers overwhelmingly expect higher power density to be the most important power electronics trend, according to 35% of respondents, followed by integration with other technologies, e.g., IoT and smart grid, (20%), higher efficiency (17%) and adoption of WBG semiconductors (15%).

When asked about emerging megatrends having the biggest impact on power electronics in the next five years, renewable energy/infrastructure and EVs were the clear winners. Renewable energy/energy infrastructure topped the list, according to 36% of survey respondents, followed by EVs (34%), AI (17%) and IoT/IIoT (11%).

Renewable energy like solar and wind power requires highly reliable and advanced power electronics for efficient energy conversion, grid integration and energy storage solutions. For EVs, the demand is driving the need for more efficient power electronics, including advanced battery management systems, high-efficiency chargers and powertrain components.

Although silicon MOSFETs and IGBTs are commonly used by power designers, the adoption of GaN and SiC continues to grow. According to the survey, 20% of respondents use SiC devices and 16% use GaN (5% for <400 V, 5% for >800 V and 6% for 650-800 V).

At PCIM Europe, WBG semiconductors take center stage, especially SiC power devices, with a wide range of new product launches. Here is a selection of power semiconductors launched at the conference, starting with SiC devices.

WBG power semiconductors at PCIM

SiC power ICs

Alpha and Omega Semiconductor Limited  (AOS) has expanded its surface-mount and module package portfolio options for the second generation 650-V to 1,200-V αSiC MOSFETs. These devices can be used in a range of applications, including xEV charging, solar inverters and industrial power supplies. The new packages give designers the added flexibility of multiple system optimization options to further maximize system efficiency while streamlining their manufacturing process, AOS said.

The first new surface-mount package is available for the AOBB040V120X2Q 1,200 V/40-mΩ αSiC MOSFET in a standard D2PAK-7L package. Replacing traditional through-hole packages, this AEC-Q101-qualified product is suited for applications such as on-board chargers (OBCs) where efficient cooling can be provided by vias and backside PCB heat sinks, simplifying the assembly flow and maximizing the power density, AOS said.

AOS is also releasing its GTPAK surface-mount package with top-side cooling features. In designs where a top-side-mounted heat sink is viable, the direct heat path from the GTPAK minimizes thermal resistance and enables higher power dissipation for more effective PCB routing, the company. The first AOS product in GTPAK is the AOGT020V120X2 1,200 V/20-mΩ αSiC MOSFET for high-efficiency solar inverter and industrial power supply applications.

The new AOH010V120AM2 1,200 V/10 mΩ half-bridge αSiC module is the first product in the company’s new AlphaModule high power baseplate-less module family. Featuring press-fit pins and an integrated thermistor, it is a standard footprint module that enables the replacement of multiple discrete devices. It also simplifies both the mechanical and electrical design by providing a clear separation of electrical and cooling paths, AOS said. Single modules are suitable for residential solar inverters, while several modules in parallel will scale to power levels required for fast DC charging stations.

AOS will showcase the expanded package options in hall 9, booth #519.

With the launch of its 400-V CoolSiC MOSFETs, Infineon Technologies AG extends the portfolio to voltages below 650 V. The new CoolSiC MOSFET 400-V family, based on the  second generation (G2) CoolSiC technology introduced earlier this year , targets the AC/DC stage of AI servers. They also are suited for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS) as well as solid-state circuit breakers for residential buildings.

Implemented in a multi-level PFC, the AC/DC stage of the AI server power supply unit (PSU) can achieve a power density of more than 100 W/in³ and 99.5% efficiency, which is an improvement of 0.3 percentage points over solutions using 650-V SiC MOSFETs. It also leverages the company’s CoolGaN transistors in the DC/DC stage.

The combination of high-performance MOSFETs and transistors enables the power supply to deliver more than 8 kW with an increase in power density by a factor of more than three compared to current solutions, Infineon said.

The new MOSFET portfolio is comprised of 10 products: five R_DS(on) classes from 11 to 45 mΩ in Kelvin-source TOLL and D²PAK-7 packages with .XT package interconnect technology. The CoolSiC technology in combination with the .XT interconnect enables the devices to handle power peaks and transients caused by sudden changes in the power requirements of the AI processor. They also deliver high performance under operating conditions with higher junction temperatures.

Engineering samples of the CoolSiC MOSFET 400-V portfolio are now available. Production will start in October 2024. Infineon is exhibiting its Si and SiC-based solutions in hall 7, booth #740 and GaN products in the adjacent booth #169.

Microchip Technology Inc. has launched a new on-board charger (OBC) solution that simplifies OBC designs, by providing automotive-qualified digital, analog, connectivity and power devices, including the dsPIC33C digital signal controller (DSC), the MCP14C1 isolated SiC gate driver and mSiC MOSFETs, in an industry-standard D2PAK-7L XL package. Leveraging the benefits of each of these components, the solution delivers higher system efficiency and reliability.

The higher efficiency and reliability are thanks to the dsPIC33 DSC’s advanced control functions, the MCP14C1 gate driver’s high-voltage reinforced isolation with robust noise immunity and the mSiC MOSFETs’ reduced switching losses and improved thermal management capabilities, according to the company. The key technologies in the solution support the other functions of an OBC, including communication interfaces, security, sensors, memory and timing.

The programmable solution provides ready-to-use software modules for power factor correction (PFC), DC/DC conversion, communication and diagnostic algorithms. The software modules in the dsPIC33 DSC are designed to optimize performance, efficiency and reliability, while offering customization to meet specific OEM requirements.

The key components in the OBC solution include the following AEC-Q100-qualified devices.

• The dsPIC33C DSC featuresa high-performance DSP core, high-resolution pulse-width modulation (PWM) modules and high-speed analog-to-digital converters (ADCs), making it suited for power conversion applications. It is functional-safety ready and supports the AUTOSAR ecosystem.

• The MCP14C1 isolated SiC gate driver is available in a SOIC-8 wide-body package supporting reinforced isolation and SOIC-8 narrow-body supporting basic isolation. The MCP14C1 is optimized to drive mSiC MOSFETs via undervoltage lockout (UVLO) for V_GS= 18-V gate drive split output terminals. Microchip said this simplifies implementation and eliminates the need for an external diode. The device also offers high noise immunity and high common-mode transient immunity (CMTI).

• The mSiC MOSFET is housed in a D2PAK-7L XL surface-mount package. It includes five parallel source sense leads to reduce switching losses, increase current capability and decrease inductance, Microchip said. This device supports 400-V and 800-V battery voltages.

The dsPIC33C DSC, the MCP14C1 isolated SiC gate driver and the mSiC MOSFET are now available. Microchip is exhibiting in hall 7, booth #640.

Navitas Semiconductor has launched its Gen-3 ‘Fast’ (G3F) 650-V and 1,200-V SiC MOSFETs, which are optimized for fast switching, high efficiency and increased power density  in applications such as AI data-center power supplies, OBCs, fast electric vehicle (EV) roadside super-chargers and solar/ESS.

Optimized for high-speed switching, the G3F family offers a 40% improvement to hard-switching figures-of-merits (FOMs) compared to the competition in CCM TPPFC systems, according to Navitas. This will enable an increase in the wattage of next-generation AI power PSUs up to 10 kW, and power per rack from 30 kW to 100-120 kW.

Based on a proprietary “trench-assisted planar” technology, the G3F GeneSiC MOSFETs are reported to offer better-than-trench MOSFET performance, while also providing higher robustness, manufacturability and cost than the competition. “The trench-assisted planar technology enables an extremely low R_DS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower R_DS(ON) under real-life operation at high temperatures compared to competition,” Navitas said.

In addition, the high speed performance with high efficiency enables up to 25°C lower case temperature, and up to 3× longer life than competitive SiC products, the company said.

Navitas also noted that the GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time and tight threshold voltage distributions for easy paralleling.

One product example cited is the 1,200-V/34-mΩ (G3F34MT12K) G3F FETs for the EV market. These devices enable Navitas’ new 22-kW, 800-V bidirectional OBC and 3-KW DC/DC converter to achieve a power density of 3.5 kW/L and a peak efficiency of 95.5%.

The G3F devices are available in industry-standard packages from D2PAK-7 to TO-247-4, designed for high-power and high-reliability applications. Parts are available now to qualified customers. Navitas is exhibiting in hall 9, booth #544.

Nexperia’s 650-V SiC diode portfolio now meets automotive and a wider range of industrial applications. The company has announced that its 650-V, 10-A SiC Schottky diode is now automotive qualified (PSC1065H-Q​) and available in real-two-pin (R2P) DPAK (TO-252-2) packaging, making it suited for a variety of applications in EVs and other automobiles.

The company also added industrial-grade devices with current ratings of 6  A, 16 A and 20 A in TO-220-2, TO-247-2, and D2PAK-2 packaging. These diodes target high-voltage and high-current applications including switched-mode power supplies, AC/DC and DC/DC converters, battery-charging infrastructure, motor drives and UPS as well as photovoltaic (PV) inverters for sustainable energy production.

The merged PiN Schottky (MPS) structure of these devices is reported to offer advantages over similar competing SiC diodes, including “outstanding” robustness against surge currents. This eliminates the need for additional protection circuitry, reducing system complexity and enabling hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications, the company said.

 Nexperia said its “thin SiC” technology delivers a thinner substrate (one-third of its original thickness), which reduces the thermal resistance from the junction to the back-side metal. This results in lower operating temperature, higher reliability and device lifetime, higher surge current capability and lower forward voltage drop, the company said.

 Nexperia is exhibiting in hall 9, booth #412.

Qorvo has claimed the industry’s first 4-mΩ SiC junction field effect transistor (JFET) in a TOLL package. It was designed for circuit-protection applications including solid-state circuit breakers, where low resistance, superior thermal performance, small size and reliability are critical.

The UJ4N075004L8S offers the industry’s lowest on-resistance, with an R_DS(on) of 4-mΩ in the 650-V to 750-V class of power devices in standard discrete packages, Nexperia said. The low R_DS(on) helps reduce heat generation, and when coupled with a compact TOLL package, enables a solution size that is 40% smaller than competing devices in TO-263 packages.

The company said the 750-V 4-mΩ SiC JFET will revolutionize circuit breakers by supporting the space limitations of electromechanical protection devices and operating without the need for sophisticated cooling systems. It also is expected to help accelerate the transition to semiconductor-based solid-state circuit breakers (SSCBs).

The JFETs provide the ability to turn off at very high inrush currents during circuit faults and the new JFET can also withstand high instantaneous junction temperatures without degradation or parametric drift, the company said.

Samples are available, followed by full production in the fourth quarter of 2024, including additional JFET options (750 V with 5-mΩ and 1,200 V with 8- mΩ ratings in TO-247 packaging).

The company is exhibiting in hall 7, booth #406.

Rohm Semiconductor has unveiled four new models as part of the TRCDRIVE pack series with 2-in-1 SiC molded modules, which will reduce the size of EV inverters. The new devices include two 750-V-rated BSTxxxD08P4A1x4 and two 1,200-V-rated BSTxxxD12P4A1x1 devices, optimized for xEV traction inverters. The TRCDRIVE pack supports up to 300 kW and features high power density and a unique terminal configuration, which solves some of the biggest challenges—miniaturization, higher efficiency and fewer person-hours—of traction inverters, the company said.

Rohm said the TRCDRIVE pack solves a difficult challenge for SiC power devices, which is achieving low loss in a small size.

The TRCDRIVE pack reduces size by using a unique structure that maximizes heat dissipation area. When combined with Rohm’s 4th generation SiC MOSFETs with low ON resistance, the devices offer a power density 1.5 times higher than that of general SiC molded modules, which contributes to the miniaturization of xEV inverters.

The modules also feature control signal terminals using press-fit pins, enabling easy connection to reduce installation time. The low inductance (5.7 nH) is achieved by maximizing the current path and using a two-layer bus-bar structure for the main wiring, contributing to lower losses during switching.

The company said it has established a mass production system similar to discrete products, making it possible to increase production capacity by 30 times compared to conventional SiC case-type modules.

 The TRCDRIVE pack is scheduled to be launched by March 2025 with a lineup of 12 models in different package sizes and mounting patterns. Rohm is developing a 6-in-1 product with a built-in heat sink that is expected to speed up traction inverter design and a model rollout that is tailored to a variety of design specifications. The company is exhibiting in hall 9, booth #304.

SemiQ Inc. has added 1,700-V SiC Schottky discrete diodes and dual diode packs to its QSiC product line. The new devices target a range of demanding applications including switched-mode power supplies, UPS, induction heaters, welding equipment, DC/DC converters, solar inverters and EV charging stations.

Featuring zero reverse recovery current and near-zero switching loss, SemiQ’s 1,700-V SiC Schottky diode technologies offer enhanced thermal management that reduces the need for cooling. For engineers, this translates into high-performance designs that minimize system heat dissipation and allow the use of smaller heat sinks for cost and space savings. All of the new products support fast switching across operating junction temperatures (Tj) of -55°C to 175°C.

The GP3D050B170X (bare die) and GP3D050B170B (TO-247-2L package) discrete diode are rated for maximum forward currents of 110 A and 151 A, respectively. The GHXS050B170S-D3 and GHXS100B170S-D3 dual diode packs are rugged modules supplied in a SOT-227 package, with maximum forward currents of 110 A and 214 A, respectively. They offer high performance at high frequencies with low loss and low EMI operation, delivering high energy efficiency and reliability by minimizing interference. Other features include low stray inductance, high junction temperature operation, rugged and easy mounting and an internally isolated package for optimal insulation and thermal conductivity.

In addition, the low junction-to-case thermal resistance enables efficient heat dissipation, ensuring stability under high-power conditions and the modules can be easily connected in parallel due to the positive temperature coefficient (Tc) of the forward voltage (Vf), the company said.

All parts have been tested at voltages exceeding 1,870 V and have undergone avalanche testing up to 1,250 mJ. The devices are showcased at SemiQ’s stand at Alfatec’s booth in hall 7, booth #418.

SemiQ also unveiled the latest additions to its QSIC family of MOSFET half-bridge modules in the S3 package. These 1,200-V modules feature industry-standard 62-mm footprints with a height of 26.3 mm. The new power modules address the size, weight and power demands of challenging applications, including induction heaters, welding equipment, UPS, photovoltaic and wind inverters, ESS, high-voltage DC/DC converters and EV battery charging systems. They are available in 600-A (GCMX003A120S3B1-N) and 400-A (GCMX005A120S3B1-N) variants.

WeEn Semiconductors has launched new families of SiC MOSFETs and Schottky barrier diodes (SBDs) in TSPAK packages. This package with enhanced thermal performance is designed to improve power density and reliability. The TSPAK MOSFET and SBD devices target power management in applications ranging from automotive charging and OBC applications to PV inverters and high-power-density PSUs.

These SiC modules offer a variety of configuration options for design flexibility. Advanced feature options include synchronized chip current sharing, integrated temperature sensors, top-side cooling and the latest clip-bond technologies.

Originally developed for automotive applications, TSPAK devices combine top-side cooling capability with low thermal impedance for enhanced thermal performance. By removing the PCB thermal resistance from the thermal dissipating path, the junction-ambient thermal resistance improves by 16-19%, the company said. This supports high reliability by enabling a greater number of power cycles than conventional packaging and providing the increased power densities needed in compact system designs. Other features include low circuit inductance and low EMC noise to help improve performance and reduce filtering requirements.

The TSPAK MOSFETs are available in 650-V, 750-V and 1,200-V options with resistances ranging from 12 mΩ to 150 mΩ. TSPAK SBDs are available with current ratings of 10 to 40 A in 650-V, 750-V, and 1,200-V variants. The company is exhibiting in hall 9, booth #538.

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Gan power ICs

Efficient Power Conversion Corp. (EPC) has introduced its 50-V, 8.5-mΩ EPC2057 GaN FET in a tiny 1.5 × 1.2-mm footprint, specifically designed for high-power USB-C devices including those used in consumer electronics, in-car charging and e-mobility. The small footprint enables more efficient power adapters and chargers.

The 50-V GaN FET with ultra-low on-resistance of 8.5 mΩ is reported to significantly reduce power losses and enhance overall efficiency. In addition, the GaN technology enables faster switching speeds, improving power density and reducing the size of passive components for more compact and lightweight designs.

The EPC90155 development board is available in a half bridge featuring the EPC2057 GaN FET. It is designed for 40-V maximum operating voltage and 10-A maximum output current. The 2 × 2-inch (50.8 × 50.8 mm) board contains all critical components.

The EPC2057 is priced at $0.67 each in quantities of 2,500. The EPC90155 development board is priced at $200.00 each. EPC is exhibiting in hall 9, booth #318.

Infineon also unveiled two new CoolGaN product technologies: the CoolGaN bidirectional switch (BDS) and CoolGaN Smart Sense. The CoolGaN BDS family offers bidirectional switches available at 40 V, 650 V and 850 V. Applications include mobile device USB ports, battery management systems, inverters and rectifiers. Targeting consumer USB-C charger and adapter applications, the CoolGaN Smart Sense products offer lossless current sensing, simplifying design and further reducing power losses. They also integrate transistor switch functions in one package.

The CoolGaN BDS high voltage will be available at 650 V and 850 V and feature a true normally-off monolithic bidirectional switch with four modes of operation, Infineon said.

Based on the gate injection transistor (GIT) technology, the high-voltage devices have two separate gates with substrate terminal and independent isolated control and offer high performance under repetitive short-circuit conditions. One BDS can be used instead of four conventional transistors, delivering higher efficiency, density and reliability as well as cost savings. They can optimize performance by replacing back-to-back switches in single-phase H4 PFC and HERIC inverters and three-phase Vienna rectifiers and also can be implemented in single-stage AC power conversion in AC/DC or DC/AC topologies.

Optimized to replace back-to-back MOSFETs used as disconnect switches in battery-powered consumer products, the CoolGaN BDS 40 V is a normally-off, monolithic bidirectional switch based on the company’s in-house Schottky Gate GaN technology. In this application, the new device offers a 50-75 percent PCB savings and more than 50 percent reduction in power losses. The first 40-V CoolGaN BDS product has a 6 mΩ R_DS(on). More products will follow.

The CoolGaN Smart Sense products offer 2-kV electrostatic discharge withstand and can connect to controller current sense for peak current control and overcurrent protection. The current sense response time is ~200 ns, which is equal or less than common controller blanking time, Infineon said.

Engineering samples of the CoolGaN BDS 40 V are available now for 6 mΩ, followed by 4 mΩ and 9 mΩ samples in the third quarter of 2024. Samples of the CoolGaN BDS 650 V will be available in the fourth quarter of 2024, and 850 V will follow in early 2025. CoolGaN Smart Sense samples will be available in August 2024. Infineon is exhibiting its Si and SiC-based solutions in hall 7, booth #740 and GaN products in the adjacent booth #169.

Texas Instruments Inc. (TI) has launched its first intelligent power module (IPM) and the industry’s first 650-V three-phase GaN IPM for 250-W motor drive applications. The DRV7308 GaN IPM addresses the key challenges—efficiency, size and cost—that engineers typically face when designing major home appliances and heating, ventilation and air-conditioning (HVAC) systems.

The integrated device enables more than 99% inverter efficiency by integrating TI’s GaN technology. In addition, the high integration, combined with its efficiency, can reduce solution size by up to 55%, eliminating the need for an external heat sink. It also offers optimized acoustic performance and lowers system costs, TI said.

Addressing the need to meet worldwide efficiency standards for appliances and HVAC systems such as SEER, MEPS, Energy Star and Top Runner, the DRV7308 helps engineers meet these standards to deliver more than 99% efficiency and improve thermal performance, with 50% reduced power losses compared to existing solutions, according to TI.

Thanks to GaN technology, the new GaN IPM delivers high power density in a 12 × 12-mm QFN package, claiming the industry’s smallest IPM for 150-W to 250-W motor-drive applications.

The DRV7308 also is reported to deliver industry-low dead time and low propagation delay, both less than 200 ns, enabling higher pulse-width modulation (PWM) switching frequencies that reduce audible noise and system vibration. Together, in combination with the higher power efficiency and integration, the DRV7308 also reduces motor heating, which can improve reliability and extend the lifetime of the system.

Pre-production quantities of the DRV7308 GaN IPM, available in a 12 × 12-mm, 60-pin QFN package, are available for purchase now on TI.com. Pricing starts at $5.50 in quantities of 1,000. TI has additional GaN IPMs under development to meet the needs of higher and lower power applications. An evaluation module and a 250-W motor inverter reference design are available. The DRV7308EVM evaluation module is priced at $250. TI is exhibiting in hall 7, booth #652.

Si MOSFETS and IGBTs at PCIM

Silicon MOSFETs and IGBTs are commonly used power semiconductor devices. According to the Power Electronics Survey, 21% of survey respondents use IGBTs and 38% use silicon MOSFETs in their designs. A few key reasons: silicon-based MOSFETs are cost effective, widely available and suit a range of applications, while IGBTs are widely used in medium-to-high power applications, such as motor control and industrial equipment, thanks to their high breakdown voltage and low saturation voltage.

Complementing its WBG semiconductor portfolio, Infineon also introduced the 600-V CoolMOS 8 high-voltage SJ MOSFET product family, aimed at advanced power supply applications. Enabling cost-effective Si-based solutions, these devices feature an integrated fast body diode, making them suitable for a range of applications such as server and industrial SMPS, EV chargers and micro-solar.

The new family delivers several improvements over the CoolMOS CFD7 and CoolMOS P7 series. At 10 V, the 600-V CoolMOS 8 SJ MOSFET family offers an 18 percent lower gate charge (Q_g) than the CFD7 and 33 percent lower than the P7. At 400 V, the product family offers a 50 percent lower output capacitance C_OSS than the CFD7 and the P7. The turn-off losses (E_oss) also have been reduced by 12 percent compared to the CFD7 and the P7 and the reverse recovery charge (Q_rr) is three percent lower compared to the CFD7. In addition, the family offers a 14 to 42 percent improvement in thermal performance, compared to the previous generation.

Infineon claims the new devices offer the lowest reverse recovery time (t_rr) on the market, and together, these features deliver high efficiency and reliability in soft-switching topologies such as LLC and ZVS phase-shift full-bridge as well as high performance in PFC, TTF and other hard-switching topologies.

The 600-V CoolMOS 8 SJ MOSFETs come in SMD QDPAK, TOLL and ThinTOLL 8 × 8 packages. Samples are now available. Infineon is exhibiting its Si and SiC-based solutions in hall 7, booth #740 and GaN products in the adjacent booth #169.

Onsemi’s new 7^th generation 1,200-V QDual3 IGBT power modules are designed for renewable energy applications, offering increased power density and delivering up to 10% more output power than other available competing products, according to the company. Based on the latest Field Stop 7 (FS7) IGBT technology, the 800-A QDual3 module delivers high efficiency to reduce system costs and simplify designs.

Onsemi said in a 150-KW inverter, the QDual3 module will dissipate 200 W less in losses compared to the closest competition, which significantly reduces heat-sink size. The QDual3 is designed to operate in harsh conditions and is suited for high-power electronics converters such as central inverters in solar farms, ESS, commercial agricultural vehicles (CAVs) and industrial motor drives. Two new products—the NXH800H120L7QDSG and SNXH800H120L7QDSG— are available.

Using the QDual3 modules, manufacturers can build a solar inverter and ESS that output more power in the same system size, enabling more efficient energy management and storage capabilities, and allowing for a smoother integration of solar power into the grid, onsemi said. In addition, the modules mitigate the intermittency of solar energy by storing excess power in an ESS to ensure a reliable and consistent energy flow. For large systems, the modules can be paralleled to increase the output power up to a couple of MWs.

The QDual3 IGBT module features an 800-A half-bridge configuration that integrates the latest Gen7 trench FS IGBT and diode technology using onsemi’s advanced packaging techniques to reduce switching and conduction losses. With FS7 technology, the die size is reduced by 30%, allowing more die per module. This increases the power density to enable the maximum current capacity up to 800 A or higher, the company said, and with an IGBT Vce(sat) as low as 1.75 V (175°C) and low E_off, the 800-A QDual3 module dissipates 10% lower energy losses than the closest alternative. Onsemi is exhibiting in hall 9, booth #332.

Joining the company’s new families of SiC MOSFETs and Schottky barrier diodes (SBDs), WeEn Semiconductors also has announced a new range of high-performance and rugged IGBTs.

The new 650-V and 1,200-V devices incorporate a fast recovery anti-parallel diode and claim extremely low leakage currents and exceptional conduction and switching characteristics at both high and low junction temperatures.

Based on an advanced fine trench gate FS technology, the new IGBTs provide a more uniform electric field within the chip, support higher breakdown voltages and offer improved dynamic control, WeEn said. They also offer an optimized trade-off between conduction and switching losses, as well as an enhanced EMI design, maximizing efficiency in a variety of mid- to high-switching-frequency power conversion designs.

The IGBTs offer ratings of 650 V/75 A, 1,200 V/40 A and 1,200 V/75 A and are supplied in TO247 or TO247-4L packages depending on the selected device. All of the devices will operate with a maximum junction temperature (T_j) of 175°C and have undergone high-voltage H3TRB (high-humidity, high-temperature and high-voltage reverse bias) and 100%-biased HTRB (high-temperature reverse bias) tests up to this maximum.

The IGBTs are available in bare die, discrete and module product variants to meet a variety of applications. These include solar inverters, motor control systems, UPS and welding. A positive temperature coefficient simplifies parallel operation in applications where higher performance is required.