PDK for advanced GaAs MMIC foundry process

The PPH25X PDK (process design kit) is specifically developed for high-frequency and high-power designs and is fully qualified by UMS. The process features very high breakdown voltage that achieves power density up to 1-W per mm of gate periphery (load-pull power measurements exhibit 5-dB power gain at 30 GHz for a large 8 x 75-µm periphery). Small via-hole definitions through the 70-µm substrate can be connected directly to the sources of the transistors, reducing parasitics and simplifying wideband amplifier design. (Call company for pricing and availability.)

AWR , El Segundo , CA
Sherry Hess 310-726-3000

http://awrcorp.com
UMS (N&S America)
Totowa , NJ
Philippe Labasse 973.812.2139

http://www.ums-gaas.com