By Gina Roos, editor-in-chief
Addressing the pain points in spectroscopic analysis, the need for a wider range of wavelengths, and sensitivity, together with smaller packaging, Kyoto Semiconductor Co., Ltd. has developed a two-wavelength photodiode that integrates silicon (Si) and indium-gallium-arsenide (InGaAs) photodiodes. The KP-2 two-tone photodiode, KPMC29, offers a smaller package that is one-eighth the volume of previous-generation devices, with photosensitivity over a wide wavelength range of 400 nm to 1,700 nm, arrayed on the same light axis.
Also surface-mountable, the small size of the KPMC29, together with broadband sensitivity, can be used in health-care applications that require smaller footprints, including medical biometric monitoring like pulse oximeters and wearable activity monitors.
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In addition, because it is possible to independently produce photocurrent signals from the Si and InGaAs photodiodes, said the company, measuring the photocurrent ratio will allow the device to be used as a radiation thermometer that can measure temperatures without direct contact with a hot object.
Samples will be available starting on Aug. 31, 2020, followed by mass production in April 2021.
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