Point-to-point radios block diagram

Description

Medium power amplifiers
Experience GaAs-like linearity with reduced parameter spread, improved reliability and 100% RF testing on a silicon budget.
Parameter spread reduced by > 50% compared to GaAs equivalents
• Low batch to batch parameter spread because of high volume front end
• Low parameter variation over temperature because of integrated bandgap
• Industrial RF tested
Reduces design risk by limited parameter spread and feature flexibility.
Increases design reliability (8x HBM ESD performance) during production and over life (5x operating life)

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