The HMC755LP4E GaAs InGaP HBT MMIC power amplifier is rated from 2.3 to 2.8 GHz and provides up to 31 dB of gain. This amplifier operates from a single 5-V supply and achieves 28% power-added efficiency at 33 dBm of saturated output power. For 25-dBm OFDM output power (64 QAM, 54 Mbits/s), the device achieves an error vector magnitude of only 2.5% making it ideal for WiMAX/LTE/4G Applications.
Its three power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or to fully power-down the PA. Housing is in a 4 x 4-mm QFN SMT package, and operating temperature is from –40° to 85°C. ($10.84 ea/10 — available now.)
Hittite Microwave
Chelmsford , MA
Sales 978-250-3343
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