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Power inductors improve 5G smartphone performance

Murata has introduced a series of power inductors for 5G smartphones that deliver a 20% increase in lsat and a 50% reduction in DC resistance.

Murata Murata Manufacturing Co., Ltd.  has launched the DFE21CCN series of power inductors developed for 5G smartphones. Designed for DC/DC converter and power management circuitry, the power inductors are said to deliver significant performance upgrades compared to conventional inductors.

Murata DFE21CCN power inductorsBuilt on a proprietary metal material, an optimized molding technique, and L-shaped electrodes, these features enable higher operation efficiency levels and downsizing of system designs, said Murata. In addition, the L-shaped electrodes are said to offer much higher density levels compared to competitive devices.

The DFE21CCN inductors offer a a 20 percent increase in saturation current (Isat) and 50 percent reduction in DC resistance (RDC) compared to their predecessors. The line is comprised of four part numbers and inductance values: 0.24 µH, 0.47 µH, 1.0 µH, and 2.2 µH.

The DFE21CCNR24MEL offers a 0.24-µH inductance value, with an RDC of 20 mOhm (max) and an Isat of 6.5 A (max). The DFE21CCNR47MEL provides a 0.47-µH inductance, 29 mOhm (max) RDC, and 4.8 A (max) Isat. The 1.0 µH-rated DFE21CCN1R0MEL and 2.2 µH-rated DFE21CCN2R2MEL devices have typical RDC figures of 60 mOhm and 138 mOhm, with Isat figures of 3.3 A and 2.1 A, respectively.

The DFE21CC product series is available in a 0805-inch size format. The operating temperature range is -40°C to 125°C.

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