Power LDMOS FET
offers 175-W output
The LB501 power LDMOS FET features an output
power of 175 W at 500 MHz with a minimum gain of
13 dB. The part is targeted for operation in the
1 to 600-MHz range.
Additional features include a total device
dissipation of 440 W, a junction to case thermal
resistance of 0.44°C/W, a maximum junction
temperature of 200°C, a drain current of 23
Adc, and a drain to gate voltage of 70 V.
($138.18 ea/50–stock, 4 weeks ARO.)
Polyfet RF Devices
Camarillo, CA
Ed Greenbaum 805-484-4210
Fax 805-484-3393
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