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Power MOSFET cuts on-resistance by 27%

Vishay’s 600-V E Series power MOSFET lowers conduction and switching losses, while providing higher current in a smaller package.

Targeting telecom, industrial and computing applications, Vishay Intertechnology, Inc. has released its first fourth-generation 600-V E Series power MOSFET in a new top-side cooling PowerPAK 8 × 8LR package. The SiHR080N60E addresses the need for efficiency and power density improvements in two of the first stages of the power system architecture: power factor correction (PFC) and subsequent DC/DC converter blocks.

Compared to previous-generation devices, the Vishay Siliconix n-channel SiHR080N60E reduces on-resistance by 27% and resistance times gate charge, a key figure of merit (FOM) for 600-V MOSFETs used in power conversion applications, by 60%. The power MOSFET also delivers higher current in a smaller footprint than devices in the D²PAK package.

Vishay's SiHR080N60E power MOSFET.

(Source: Vishay Intertechnology, Inc.)

The SiHR080N60E’s PowerPAK 8 × 8LR package, measuring 10.42 × 8 × 1.65 mm, features a 50.8% smaller footprint than the D²PAK while offering a 66% lower height. Thanks to the top-side cooling, the package provides high thermal capability, with an extremely low junction to case (drain) thermal resistance of 0.25°C/W. Vishay said this allows for 46% higher current than the D²PAK at the same on-resistance level, enabling much higher power density.

Built on Vishay’s energy-efficient E Series superjunction technology, the SiHR080N60E offers low typical on-resistance of 0.074 Ω at 10 V and ultra-low gate charge down to 42 nC. The result is an industry-low FOM of 3.1 Ω*nC, which lowers conduction and switching losses to save energy and increase efficiency in power systems >2 kW, Vishay said.

For improved switching performance in hard-switched topologies such as PFC, half-bridge and two-switch forward designs, the MOSFET provides low typical effective output capacitances Co(er) and Co(tr) of 79 pF and 499 pF, respectively. It also features a Kelvin connection for improved switching efficiency.

The power MOSFET can be used in a range of applications. These include servers, edge computing, super computers and data storage; and high intensity discharge (HID) lamps and fluorescent ballast lighting; as well as telecom SMPS, solar inverters, welding equipment, induction heating, motor drives, UPS and battery chargers.

The SiHR080N60E is RoHS-compliant and halogen-free and can withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing. Samples and production quantities are available now.

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