Power MOSFET yields cooler designs

Alpha and Omega Semiconductor Ltd. (AOS) has launched the AONA66916 100-V power MOSFET packaged in a top- and bottom-side cooling DFN 5 × 6 mm package. The company claims its unique double-sided cooling package not only keeps its semiconductor products cooler, but also improves design efficiency in telecom, solar and DC/DC applications, often operating in harsh conditions.

(Source: Alpha and Omega Semiconductor Ltd.)

The power MOSFET features a combination of low RDS(ON)and wide safe operating area (SOA), higher in-rush current for faster start-up and shorter down time, lead (PB)-free plating, as well as the top-side cooling capability for improved thermal performance. The device is RoHS compliant and halogen-free.

Traditionally, for a standard DFN 5 × 6 mm package, the bottom contact is the main contributor for cooling, with the majority of heat generated by the device transferred to the PCB. In comparison, the new AOS top- and bottom-cooling DFN 5 × 6 mm package achieves the highest heat transfer between the exposed top contact and heat sink due to its large surface contact area construction. This allows the device to achieve a low thermal resistance (Rthc-top max) of 0.5°C/W, delivering thermal performance improvements.

Since the top-exposed DFN 5 × 6 mm package features the same footprint as a standard DFN 5 × 6 package, there is no need to modify existing PCB layouts, AOS said.

The AONA66916 uses the company’s 100-V AlphaSGT technology for balanced performance in hard switching applications. It provides a maximum R_DS(on) rating of 3.4 mOhms and a 175°C junction temperature rating.

The AONA66916 is available in production quantities with a lead time of 14 to 16 weeks. It is priced at $1.85 per unit in quantities of 1,000.