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Power MOSFETS deliver higher power efficiency, board savings

Infineon has launched its new generation of StrongIRFET 2 power MOSFETs in 80-V and 100-V devices for a broad range of applications.

Infineon Technologies AG has launched the StrongIRFET 2, its new generation of power MOSFET technology in 80-V and 100-V devices. Designed to ease product selection and purchasing, these power MOSFETs, optimized for both low- and high-switching frequencies, support a broad range of applications, including SMPSmotor drivesbattery-powered toolsbattery managementUPS, and light electric vehicles.

Infineon said the new StrongIRFET technology offers 40 percent RDS(on) improvement and over 50 percent lower Qg compared to the previous generation. This translates into higher power efficiency for improved overall system performance. In addition, the increased current ratings allow for higher current carrying capability, which eliminates the need to parallel multiple devices for lower bill-of-material (BOM) costs and board savings, said the company.

Infineon StrongIRFET 2 vs StrongIRFET performance comparison

Compared to the previous StrongIRFET generation devices in 100 V TO-220 package, StrongIRFET 2 power MOSFETs show improvements such as ~40 % lower RDS(on) and ~65% reduced QG. (Image: Infineon Technologies.

Infineon StrongIRFET 2 power MOSFETsThe family is comprised of a broad range of RDS(on) classes in 80 V and 100 V. The devices are available in a standard pinout, which allows for drop-in replacement.

The StrongIRFET 2 power MOSFETs can be ordered now in a TO-220 package. The new portfolio will be available in various packages continuing with TO-220 FullPAK, D 2PAK, D 2PAK 7-pin, and DPAK. Distribution partners offer broad availability for increased security of supply.

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