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Power MOSFETs have 3.3-mΩ on-resistance

Power MOSFETs have 3.3-mΩ on-resistance

The 20-V Si7633DP and 30-V Si7135DP are p-channel TrenchFET power MOSFETs with a ±20-V gate source voltage that offer the
industry’s lowest on-resistance for their device types in the SO-8 footprint. The 20-V device offers an on-resistance of 3.3
mΩ at 10 V, and 5.5 mΩ at 4.5 V. The 30-V Si7135DP offers an on-resistance of 3.9 mΩ at 10 V, and 6.2 mΩ at 4.5 V.

Power MOSFETs have 3.3-mΩ on-resistance

The devices are used as the adapter switch and for load switching applications in notebook computers and industrial/general
systems. Samples and production quantities are available now, with lead times of 10 to 12 weeks for larger orders. (From $0.48
ea/100,000 — available now.)

Vishay Intertechnology , Malvern , PA
Information 619-336-0860

http://www.vishay.com/

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