By Gina Roos, editor-in-chief
Toshiba Electronic Devices & Storage Corporation has expanded its U-MOS X-H series with the introduction of 80-V N-channel power MOSFETs fabricated with the latest-generation process. The MOSFETs are suitable for switching power supplies in industrial equipment used in data centers and communication base stations, as well as in motor control equipment.
The new devices include the TPH2R408QM , housed in an SOP advance, surface-mount–type packaging, and the TPN19008QM , housed in a TSON advance package. Both devices are available now.
The drain-source on-resistance in the new 80-V U-MOS X-H products is approximately 40% lower than that of 80-V products in the current-generation process U-MOS VIII-H series products, according to Toshiba. In addition, the tradeoff between the drain-source on-resistance and the gate charge characteristics1 has also been improved2 by optimizing the device structure. These improvements have resulted in the industry’s lowest3 power dissipation for the power MOSFETS, which help reduce power consumption in end equipment, said Toshiba.
Product availability at online distributors can be checked at the following links: TPH2R408QM and TPN19008QM.
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