Power transistor covers 2.5-, 3.5-GHz apps

The NPT1004 gallium nitride (GaN) high-electron-mobility transistor (HEMT) delivers 45 W at 28 V for high-peak-to-average ratio and pulsed applications. It delivers 5-W average power for 2.5 to 2.5-GHz WiMAX applications and 4.5 W for 3.3 to 3.5 GHz WiMAX applications.

The transistor combines a broadband dc to 4-GHz high-power-density GaN-on-Si HEMT for light thermal load power applications. It is housed in a thermally enhanced PSOP package. ($29 ea/1,000 — available now.)

Nitronex , Durham , NC
Information 919-424-9100

http://www.nitronex.com