Advanced Linear Devices designs cutting-edge energy-harvesting devices, but realized that if they wanted to push the limits for future designs, they would need to improve on design precision even more for any new energy-harvesting designs. To test the limits of energy-harvesting technology, they created the ALD210800/800A n-channel MOSFETs.
These precision n-channel MOSFET arrays are unique because they feature zero-threshold voltage and establish industry benchmarks for forward transconductance and output conductance. The MOSFETs can be characterized with different input and output requirements, and reduce footprint by up to 50%. The matched-pair array gives circuit designers the flexibility to develop next-generation energy-harvesting systems and low-power mobile devices that were never before possible. To develop this design, the company had to involve more personnel than usual, including applications and testing departments. The company also had to develop new test hardware that would program and validate the devices. The new programming systems had to be developed from scratch and required new circuit designs and with separate debugging from the new device designs.
The precision n-channel MOSFETs feature zero-threshold voltage and an industry best for forward transconductance.
The company was one of the first customers for the highly precise MOSFETs (for their energy-harvesting modules and circuits), but energy harvesting is a booming yet young industry that is always pushing for smaller, more-precise technology for a growing number of applications. The company was able to meet the challenges for better precision with a was a collaborative effort from a team of six individuals, plus support from other groups. But it didn’t happen overnight. It took approximately five years and several design iterations to get what they wanted.
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