Precision p-channel MOSFET arrays enable game-changing accuracy

The ALD310708A and ALD310708 high-precision quad p-channel EPAD MOSFET arrays target next-generation sensor circuits used in portable instruments. The devices enable precision and low power operation in circuit designs for current mirrors, sources and oscillators. They enhance the sensitivity and accuracy of portable test and detection equipment. The devices provide the ability to build 0.5% precision current mirrors and current sources without trimming circuitry.

The p-channel EPAD enhancement mode MOSFET arrays are designed for the rapidly growing Internet of Things (IoT) platforms and backup power applications as well as a variety of other analog and digital electronic systems requiring ultra-precise sensing and detection abilities. The ALD310708A enables a gate threshold of -0.80V, which enables circuit designs with operating voltages as low as 0.80 V. It offers a maximum offset voltage of  2 mV, as opposed to the standard grade ALD310708, which has the same gate threshold but offers an offset voltage of 10 mV.