MOSFET arrays offer innovative control for EH applications
The ALD210800A / ALD210800 precision n-channel MOSFET array features zero-threshold voltage and establishes industry benchmarks for forward transconductance and output conductance, allows each MOSFET to be characterized with different input and output requirements, and reduces the footprint by up to 50%. The matched-pair array gives circuit designers the flexibility to develop next-generation energy harvesting systems and low-power mobile devices that were never before possible. Designers can build circuits with multiple cascading stages and build a nanopower input amplifier stage operating at a new industry low of
The matched-pair MOSFETs feature a zero gate threshold voltage VGS(th) set precisely at +0.00 V ±0.01 V, and VOS to 2 mV and 10-mV max. The precision parameters of the device enable Advanced Linear Devices: www.aldinc.com
High-temp SiC MOSFET suits power converter applications
The CHT-NEPTUNE is a high-temperature, high-voltage SiC MOSFET specifically built for power converter applications in high-temperature and harsh environments. It is available in a hermetically sealed TO-257 metal package. The case is isolated from the switch terminals and features junction-to-case thermal resistance of 1.1°C/W.
The SiC MOSFET is guaranteed for operation over the full range from –55° to +225°C. It has a breakdown voltage in excess of 1,200 V and is capable of switching currents up to 10 A at the maximum temperature (Tj = 225°C). The device features a body diode that can be used as free-wheeling diode. The switch can be controlled with a typical gate voltage (VGS ) of -2 V / +20 V. The transistor’s RDS(on) exhibits 90 mΩ at 25°C and 150 mΩ at 225°C with VGS = 20 V. The device features low and temperature-independent switching energy
Cissoid: www.cissoid.com
Industry’s smallest MOSFETs suit power mgmt
The NTNS3193NZ and NTNS3A91PZ ultrasmall, ultrathin small-signal MOSFETs are optimized for space-constrained portable consumer electronics such as tablet computers, smartphones, GPS systems, digital media players, and portable games consoles. The industry’s most compact small-signal MOSFETs are housed in a tiny 0.62 x 0.62 x 0.4-mm XLLGA3 package. The MOSFETs have a total surface-mount area of 0.38 mm2 , replacing packages such as SOT-883 (surface-mount area of 0.6 mm2 or the SOT-723 (with mount area of 1.44 mm2 ).
The NTNS3193NZ is a 20-V single n−channel 0.75−Ω MOSFET with typical on-resistance at ±4.5-V gate to source. This is complemented by the NTNS3A91PZ −20-V, single p−channel device, which has 1.3-Ω typical on-resistance at ±4.5 V.
ON Semiconductor: www.onsemi.com
600-V MOSFET family targets lighting market
The AOD4C60, AOD3C60, and AOD2HC60, the newest additions to its 600-V AlphaMOS portfolio, suit commercial and industrial CFL ballasting as well as LED lighting for residential and commercial applications. The devices use proprietary AlphaMOS technology, providing an RDS(on) GS of 10 V. 
The device structure of these MOSFETs allow for a smooth dv/dt and di/dt transition during hard switching. They offer 3x the avalanche current capability versus comparable superjunction solutions and enable power circuits to outlast fault conditions such as power-line surges and lighting surges. These solutions are available in 4-, 3-, and 2.5-A varieties in the DPAK package.
Alpha & Omega Semiconductor: www.aosmd.com
Power MOSFET offers ultra-low on-state resistance
The StrongIRFET power MOSFETs featuring 1.3 to 3.3-mΩ on-state resistance. The MOSFETs target industrial applications including battery packs, inverters, uninterruptible power supplies, solar inverters, forklift trucks, power tools, mobility scooters, and ORing and hot-swap applications.
The current ratings range from 85 to 195 A and helps improve system reliability and provide designers flexibility when selecting an optimal device for various applications. The IRFH7440TRPbF has a current rating of 85 A and and RDSon of 2.4mΩ, while the IRFB7430PbF and IRFP7430PbF have a current rating of 195 A and an RDSon of 1.3 mΩ.
International Rectifier: www.irf.com
Low-profile transistors come in tiny packages
The CTLT3410-M621 (npn) and CTLT7410-M621 (pnp) transistors, in a space-saving low-profile TLM521 SMT package, are rated at 1.0 A of continuous current, 25-V collector-to-emitter voltage, and have an energy-efficient low VCE(sat) of 25 and 30 mV, respectively. The ultrasmall tlM621 leadless package has a low profile of 0.8 mm, taking only 2.47 mm2 of board space. It has a power dissipation of 900 mW.
The transistors are ideal for a wide variety of battery-powered portable products including mobile communications, digital cameras, laptops, and handhelds. Both are used in such power management applications as dc/dc conversion, voltage clamping, and circuit protection.
Central Semiconductor: www.centralsemi.com
Power MOSFETs tackle eco-design stds
The industry’s first super-junction transistors capable of withstanding peak voltages up to 950 V with the STx20N95K5 and STx6N95K5 MOSFETs, as well as the STx21N90K5, a 900-V device offering best-in-class energy efficiency, and the STL23N85K5, the world’s only 850-V device offered in the PowerFLAT 8 x 8-mm HV package. Applications include flat-panel televisions, PC power supplies, LED lighting drivers, and electronic ballasts for high-intensity discharge (HID) lamps.
The 900-V STP21N90K5 figure of merit is 62.5% better than the only comparable alternative device in the market. The high-voltage rating of the MOSFETs increase system safety and reliability.
STMicroelectronics: www.st.com
Power MOSFET series adds 17 devices
The E Series of 500-V power MOSFETs is 17 new devices stronger in eight packages that extend the on-resistance range of the family from 39 to 600 mΩ at 10 V, and maximum current ratings from 7 to 73 A.
The devices withstand high-energy pulses in avalanche and commutation mode with guaranteed limits through 100% UIS testing and are also RoHS compliant.
Vishay: www.vishay.com
TVS diode array protects telecom from ESD
The SR05 TVS diode array series protects telecommunication and industrial equipment against ESD and lightning-induced surge events. Each channel or I/O pin absorbs up to 25 A, and repeated ESD strikes without performance degradation.
The device features a dynamic resistance (RDYN) of 0.3 Ω and clamping voltage from line to ground of 25 A (8/20 µs) with peak pulse power of 450 W (8/20 µs), which protect small geometry chipsets from damaging transients. The diodes provide a capacitance of 3.0 pF I/O to I/O and 6 pF I/O to ground. Typical applications include protecting high-speed interfaces such as T1/E1/T3/E3 lines, Ethernet 10BaseT lines, WAN/LAN equipment, ISDN S/T interfaces, video lines, microcontroller inputs, and USB1.1 ports. ESD capability per IEC61000-4-2 is ±30 kV contact and ±30 kV air.
Littelfuse: www.littelfuse.com
650-V IGBT reduces switching losses >60%
The TRENCHSTOP 5 thin-wafer IGBT (insulated gate bipolar transistor) features 10% lower conduction and 60% lower switching losses compared to currently leading solutions. The technology targets boost PFC (ac/dc) stage and high-voltage dc/dc topologies commonly found in photovoltaic inverters, uninterruptible power supplies, and inverterized welding machines.
The TRENCHSTOP 5 technology provides the basis for the HighSpeed 5 (H5) soft, high-speed IGBT, and the HighSpeed 5 FAST (F5), which features 98% system efficiency. The increase in efficiency allows for either lower junction temperatures during operation, and ensures higher lifetime reliability, or higher power density designs. Application tests have shown TRENCHSTOP 5 technology in a TO-220 package has a 15% lower case temperature than an H3 in a TO-247 package. Other improvements include a positive temperature coefficient of the saturation voltage and turn-off switching losses. The device features a temperature-stable forward voltage drop of the fast-recovery free-wheeling diode, and reverse recovery time of
Infineon: www.infineon.com
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