Qorvo adds 1200-V SiC modules in compact package

Qorvo has expanded its SiC solutions portfolio with the introduction of four 1200-V silicon carbide (SiC) modules—two half-bridge and two full-bridge—in a compact E1B package with R_DS(on) starting at 9.4 mΩ. These SiC modules target electric vehicle (EV) charging stations, energy storage, industrial power supplies and solar power applications.

Half-bridge SiC module (Source: Qorvo)

These four SiC modules leverage Qorvo’s unique cascode configuration, which minimizes R_DS(on) and switching losses to maximize efficiency, especially in soft-switching applications, Qorvo said. In addition, due to the higher switching frequency operation, thanks to the cascode technology, it further reduces solution size by using smaller components.

These modules can replace as many as four discrete SiC FETs, which simplifies thermomechanical design and assembly, the company said. They also streamline the power supply design process by qualifying one module instead of several discrete components.

Part numbers include:

(Source: Qorvo)

The power modules feature silver-sinter die attach, which is reported to reduce thermal resistance to as low as 0.23 °C/W and when combined with the stacked die construction (the “SC” part numbers), power cycling performance is improved by 2× over comparable SiC power modules on the market, Qorvo said.

To help with product selection and performance simulation, Qorvo offers the FET-Jet Calculator and QSPICE software design tools. The calculator supports all Gen 3 and Gen 4 SiC devices, including new 750-V and 1200-V Gen 4 SiC FETs. You can meet the creator of QSPICE at APEC 2024, at Qorvo’s booth #1857.