Qorvo unveils 1,200-V Gen 4 SiC FETs

Qorvo has released its next-generation series of 1200-V silicon-carbide (SiC) FETs, claiming industry-leading figures of merit for on-resistance. The new UF4C/SC series of 1200-V Gen 4 SiC FETs target mainstream 800-V bus architectures in onboard chargers for electric vehicles, industrial battery chargers, industrial power supplies, DC/DC solar inverters, as well as welding machines, uninterruptible power supplies, and induction heating applications.

Here are the figures of merit for the UF4C/SC series:

Click for a larger image. (Image: Qorvo)

All R_DS(_on) options (23, 30, 53 and 70 milliohm) are offered in the industry-standard 4-lead kelvin source TO-247 package. Qorvo said this provides “cleaner switching at higher performance levels.”

The 53- and 70-milliohm devices are also available in the TO-247 3-lead package. These devices provide optimal thermal performance and high reliability thanks to advanced silver-sinter die attach and advanced wafer-thinning process.

All 1,200-V SiC FETs are included in the company’s FET-Jet Calculator, a free online design tool that allows for instant evaluation of efficiency, component losses, and junction temperature rise of devices used in a variety of AC/DC and isolated/non-isolated DC/DC converter topologies. Single and paralleled devices can be compared under user-specified heat-sinking conditions.

Pricing (1000-up, FOB USA) for the new 1,200-V Gen 4 SiC FETs range from $5.71 for the UF4C120070K3S to $14.14 for the UF4SC120023K4S. All devices are available from authorized distributors. Qorvo is exhibiting at PCIM Europe 2022 in Hall 7, booth #406.