RF Micro Devices unveils rGaN-HV process technology for power device products and foundry customers

RF Micro Devices unveils rGaN-HV process technology for power device products and foundry customers

GREENSBORO, NC, April 26, 2012 (GLOBE NEWSWIRE) RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the extension of RFMD’s industry-leading GaN process technology portfolio to include a new technology optimized for high voltage power devices in power conversion applications.

RFMD’s newest GaN process technology rGaN-HV enables substantial system cost and energy savings in power conversion applications ranging from 1 to 50 kW. RFMD’s rGaN-HV delivers device breakdown voltages up to 900 volts, high peak current capability, and ultra-fast switching times for GaN power switches and diodes. The new technology complements RFMD’s GaN 1 process, which is optimized for high power RF applications and delivers high breakdown voltage over 400 volts, and RFMD’s GaN 2 process, which is optimized for high linearity applications and delivers high breakdown voltage over 300 volts. RFMD will manufacture discrete power device components for customers in its Greensboro, NC, wafer fabrication facility (fab) and provide access to rGaN-HV to foundry customers for their customized power device solutions.

Bob Bruggeworth, President and Chief Executive Officer of RFMD, said, “The global demand for energy savings through improved power conversion efficiency is creating a tremendous opportunity for high-performance power devices based on RFMD’s GaN power process technologies. We expect our newest GaN power process will expand our opportunities in the high-voltage power semiconductor market, and we are pleased to provide access to rGaN-HV to our external foundry customers to support their success in the high-performance power device market.”

RFMD’s Power Conversion Devices Product Line and Foundry Services Business Unit will exhibit a broad portfolio of GaN technologies and GaN power products at the PCIM Power Industry Conference, May 8-10, in Nuremberg, Germany. More information on RFMD’s foundry services can be obtained by contacting RFMDFoundryServices@rfmd.com or by clicking on http://www.rfmd.com/products/powerconversion/

About RFMD

RF Micro Devices is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world’s leading mobile device, customer premises and communications equipment providers.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001-, ISO 14001-, and ISO/TS 16949-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD’s web site at www.rfmd.com.

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