POY4.JAN–RP
RF power amplifier brings aerospace technology to consumer market
Fabricated using TRW's advanced GaAs heterojunction bipolar transistor (HBT) technology, the RF2103 RF power amplifier was introduced as the first commercial linear power amplifier using such technology. The device exemplified two of last year's dominant trends: the shift away from military and toward commercial applications; and the growing interest in wireless communications.
The RF2103 is capable of performing at efficiencies previously unattainable with existing technologies. Most existing power amplifiers are either discrete or hybrid GaAs designs. Typically, these devices are relatively large and require both positive and negative power supplies. The use of HBT technology eliminates the negative supply, and the monolithic approach reduces the size to approximately 25% of existing designs.
The RF2103 is for use from 800 MHz to 1 GHz. It operates from a 3.0 to 6.3-V power supply and has a maximum output power at 6.3 V of 800 mW. The device comes in 14-pin ceramic SOPs and plastic DIPs. ($9 ea/100,000–available now.)
RF Micro Devices, Inc.
Greensboro, NC
Jerry Neal 919-855-8085
Fax 919-299-9809
CAPTION:
The RF2103 linear power amplifier uses heterojunction bipolar transistor (HBT) technology to reduce size and increase efficiency.
Product: RF2103 Linear Power Amplifier
Contact: Jerry Neal
Title: Vice President of Sales and Marketing
Address: RF Micro Devices, Inc., 7341-D West Friendly Ave., Greensboro, NC, 27410
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