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Rohm improves Schottky barrier diodes

Rohm’s 100-V Schottky barrier diodes with a proprietary trench MOS structure deliver industry-leading reverse recovery time for high-speed switching applications.

Rohm Semiconductor has released a new family of 100-V breakdown Schottky barrier diodes (SBDs). These new devices claim industry-leading reverse recovery time (trr) for applications such as power supply and protection circuits in automotive, including automotive LED headlamps and xEV DC/DC converters, industrial equipment and lighting.

Rohm Semiconductor's YQ series of Schottky barrier diodes.

(Source: Rohm Semiconductor)

SBDs with a trench MOS structure are known to deliver lower VF than planar varieties and provide higher efficiency in rectification applications. However, a challenge of trench MOS structures is that they typically have worse trr than planar topologies, which result in a higher power loss when used for switching, Rohm said.

Rohm’s new SBDs based on a proprietary trench MOS structure solves this challenge, simultaneously reducing VF and IR (typically tradeoffs), while still achieving class-leading trr.

The new YQ series is Rohm’s first SBD family to adopt a trench MOS structure, achieving class-leading trr of 15 ns and reducing  trr loss by approximately 37% and overall switching loss by approximately 26% over general trench-type MOS products. This also helps to lower application power consumption, Rohm said.

Trr comparison chart of Rohm Semiconductor's YQ series of Schottky barrier diodes.

(Source: Rohm Semiconductor)

The proprietary structure also improves both Vand IR loss compared to conventional planar-type SBDs, resulting in lower power loss when used in forward bias applications such as rectification, Rohm said. It also reduces the risk of thermal runaway, which is a big concern with SBDs.

Switching loss comparison chart for Rohm Semiconductor's YQ series of Schottky barrier diodes.

(Source: Rohm Semiconductor)

The YQ series trench MOS structure is created by forming a trench using polysilicon in the epitaxial wafer layer that mitigates electric field concentration. It also reduces resistance of the epitaxial wafer layer, resulting in lower VF when applying voltage in the forward direction. During reverse bias the electric field concentration is minimized, decreasing IR. The series is reported to improve VF and IR by approximately 7% and 82%, respectively over conventional products.

The YQ series SBDs are currently available through online distributors, including  Digi-KeyMouser and Farnell. The SBD product page enables users to narrow product options, facilitating the selection process during design. Application notes are available.

Rohm Semiconductor is exhibiting at APEC 2024, booth #913. The company also is hosting several demos and presentations.

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