Rugged 1700-V SiC power devices can replace silicon IGBTs

Delivering more options for efficiency and power density, Microchip Technology Inc. has expanded its silicon carbide (SiC) portfolio with a family of high-efficiency, high-reliability 1700-V SiC MOSFET die, discrete, and power modules. These SiC power devices target electric charging systems that power commercial vehicle propulsion, as well as auxiliary power systems, solar inverters, solid-state transformers, and other transportation and industrial applications.

The 1700-V SiC technology is an alternative to silicon IGBTs, enabling engineers to use two-level topologies with reduced part count, greater efficiency, and simpler control schemes, said Microchip. Due to restrictions on switching frequency by lossy silicon IGBTs, designers have had to compromise performance and use complicated topologies, added the company.

By removing the switching limitations, power conversion units can be significantly reduced in size and weight, said Microchip. This provides space for more charging stations, additional room for passengers and cargo, or extending the range and operating time of heavy vehicles, electric buses, and other battery-powered commercial vehicles, while lowering overall system cost.

One of the key features of the SiC solutions is gate oxide stability. Microchip said it observed no shift in threshold voltage even after an extended 100,000 pulses in repetitive unclamped inductive switching (R-UIS) tests, which also showed excellent avalanche ruggedness and parametric stability, demonstrating reliable operation over the life of the system.

The degradation-free body diode can eliminate the need to use an external diode with the SiC MOSFET, according to Microchip.

Other features include a short-circuit withstand capability comparable to IGBTs and a flatter RDS(on) curve over junction temperature from 0°C to 175°C, which enables the power system to operate at greater stability than other SiC MOSFETs with more sensitivity to temperature.

The 1700-V SiC MOSFET die, discrete, and power modules are available now for order in a variety of package options. Other SiC product families include MOSFETs and 700-V and 1200-V Schottky barrier diodes, available in bare die and a variety of discrete and power module packages.

To help speed SiC development, Microchip also offers AgileSwitch digital programmable gate drivers and a range of discrete and power module packaging, available in standard and customizable formats. Microchip’s Intelligent Configuration Tool (ICT) enables designers to model efficient SiC gate driver settings for the AgileSwitch family. Also available are SiC SPICE simulation models compatible with Microchip’s MPLAB Mindi analog simulator.