Samsung Electronics has started mass production for the industry’s thinnest 12-nanometer (nm)-class, 12-gigabyte (GB) and 16-GB LPDDR5X DRAM packages. The LPDDR package stacks four layers of 12-nm-class DRAM die, delivering increased density and advanced thermal management in an ultra-compact package.
The 12-nm LPDDR DRAM in a four-stack structure also reduces the thickness by approximately 9% and improves heat resistance by about 21.2%, compared to the previous generation product, according to the company.
The ultra-slim LPDDR5X DRAM packages can create additional space in mobile devices, delivering better airflow. This allows for enhanced thermal control, Samsung said, a factor that is becoming increasingly critical for high-performance applications with advanced features such as on-device AI.
Samsung attributes the thin packages to the optimization of printed circuit board (PCB), epoxy molding compound (EMC) techniques and back-lapping (grinding the backside of the wafer) process. Measuring 0.65-mm high, this is the thinnest among existing 12-GB or above LPDDR DRAM, according to the company.
Samsung plans to develop six-layer 24-GB and eight-layer 32-GB modules in the thin LPDDR DRAM packages for future devices.
In July, Samsung completed the verification of the industry’s fastest 10.7 gigabit-per-second (Gbits/s) LPDDR5X DRAM for use on MediaTek’s next-generation Dimensity platform. The 10.7-Gbits/s operation speed verification was conducted using Samsung’s LPDDR5X 16-GB package on MediaTek’s upcoming flagship Dimensity 9400 system on chip (SoC), scheduled to be released in the second half of 2024.
The 10.7-Gbits/s LPDDR5X delivers more than 25% improvement in power consumption and performance compared to the previous generation. This provides longer battery life for mobile devices and enhanced on-device AI performance, Samsung said, increasing the speed of AI features, such as voice-text generation, without requiring server or cloud access.
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