Samsung has recently completed a resistive random-access memory (ReRAM) NV memory design that features a 3-D cross point structure, according to BusinessKorea .
ReRAM technology has been characterized as power-hungry and, perhaps, having some stability issues, which makes its design difficult. As a result, some experts have said that the ReRAM technology will be the last to be commercialized among next-generation memory, including parameter RAM (PRAM) and spin-transfer torque magnetic RAM (STT-RAM).
This type of device is said to enable 3-D cross point technology and, in theory, improve the data access speed by 1,000 times, compared to existing NAND flash memory chips. It directly addresses each cell and can improve the durability of memory by 1,000 times over NAND flash. See more at: http://goo.gl/xHqMmr.
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