Second-gen 200-V eGaN rated for 60 A

The EPC2010 is the second-generation eGaN FET family is lead-free and RoHS-compliant. The device has an increased pulsed current rating of 60 A compared with 40 A for the first-generation EPC1010. It is a 200-VDS device with a maximum 25-mΩ RDS(on) with 5 V applied to the gate.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, this eGaN device is smaller and has better switching performance. Applications that benefit from eGaN FET performance include high-speed dc/dc power supplies, PoL converters, Class D audio amplifiers, and hard-switched and high-frequency circuits. The EPC9003 development board is available with more information at http://bit.ly/jMrMzT. ($5.06 ea/1,000 — available now.)

By Paul O’Shea

Efficient Power Conversion , El Segundo , CA
information 310-615-0279

www.epc-co.com