Second gen SiC MOSFET deliver 2x Amps/$

The 20-A C2M0080120D and 50-A CPM2-1200-0025B second generation SiC MOSFETs enable systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These 1,200-V MOSFETs deliver power density and switching efficiency at half the cost per amp of the company’s previous generation MOSFETs.

The performance of the SiC MOSFETs enables the reduction of required current rating by 50 to70% in some high power applications. In motor drive applications the power density can be more than doubled while increasing efficiency and providing up to twice the maximum torque of similarly rated silicon solutions. Die are available with ratings of 25 mΩ, intended as a 50-A building block for 30-kW power modules, and the 80-mΩ MOSFET in a TO-247 package suitable as higher performance, lower cost replacement for the company’s first-generation package.