Semiconductor lasers challenge traditional solutions
Edge-emitting devices deliver over 0.5 W
Offering efficiency and diffraction-limited beam quality advantages over conventional laser solutions, the PH9/10xxSF Series semiconductor diode lasers provide a single-frequency beam from 920 to 1,100 nm at more than 0.5 W (CW), a power level that previously required a diode-pumped solid-state (DPSS) device, such as an Nd:YAG laser. Based on a proprietary distributed Bragg-reflector-ridge waveguide process, the edge-emitting devices have a wall-plug efficiency of up to 50% and also provide the optical performance of a DPSS laser without the efficiency penalty of the quantum defect inherent in pumped systems.
Accepting an operating current of 750 mA, the laser diode includes features such as a beam divergence of 9 x 27°, a spectral width of less than 10 MHz, and a slope efficiency of over 0.75 W/A. (Contact John Spencer for pricing—evaluation units available now.)
Photodigm , Richardson , TX
John Spencer 972-235-7584
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