SemiQ has expanded its portfolio of QSiC silicon carbide (SiC) modules with the launch of a family of 1,200-V MOSFETs that pairs with or without 1,200-V SiC Schottky diodes in a SOT-227 package. The new 1,200-V SiC modules offer enhanced performance, delivering higher power densities and more streamlined design configurations, said the company.
(Source: SemiQ)
The QSiC modules feature high breakdown voltage (>1,400 V), high-temperature operation (Tj = 175°C), and low Rds(On) shift over the full operating temperature range. They also provide high gate-oxide stability and gate-oxide lifetime, avalanche (UIS) ruggedness and extended short-circuit withstand times, SemiQ said.
Target markets for the new ultra-efficient QSiC SiC modules and existing SOT-227 SiC SBD modules include EV charging, on-board chargers (OBCs), DC/DC converters, E-compressors, fuel cell converters, medical power supplies, energy storage systems, solar and wind energy systems, data-center power supplies, UPS/PFC circuits and other automotive and industrial power applications.
The new 1,200-V SOT-227 SiC modules are available in 20-mΩ, 40-mΩ and 80-mΩ SiC MOSFET categories. Part numbers and specs are shown below.
(Source: SemiQ)
SemiQ said all of the new QSiC modules are tested at wafer-level gate burn-in to provide high-quality gate oxide with a stable gate threshold voltage. In addition to the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests such as gate stress and high-temperature reverse bias (HTRB) drain stress, as well as high humidity, high voltage and high temperature ensure industrial-grade quality levels, said the company.
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