SiC diode integrates power conversion circuit

SiC diode integrates power conversion circuit

The RJS6005TDPP Schottky barrier diode uses silicon carbide (SiC) and suits high-output electronic systems such as air conditioners, communication base stations, and solar power arrays. The device achieves about 40% less power consumption compared existing power devices from the company.

The SiC Schottky barrier diode has a reverse-recovery time of 15 ns at 15 A forward current and a 300 A/µs di/dt, The reverse-recovery time does not degrade when the temperature rises. The forward voltage is 1.5 V and is available in a package equivalent to the TO-220. (Samples, $5 each — available now.)

By Paul O’Shea

Renesas Electronics America , Santa Clara , CA
Sales 800-366-9782
http://am.renesas.com