SiC in chip form target solar, telecom apps

The SiC Z-FET MOSFETs are the industry’s first fully qualified SiC MOSFET power devices in bare die or chip form for use in power electronics modules.

The power modules typically combine a number of discrete power switching devices – MOSFETs and diodes – in a single integrated package for high-voltage power electronics applications such as three-phase industrial power supplies, telecom power systems and power inverters for solar and wind energy systems.

The power MOSFET devices are available in two versions. The CPMF-1200-S080B measures 4.08 x 4.08-mm, rated at 1200 V/20 A with a nominal RDS(on) of 80 mΩ; and the CPMF-1200-S160B measures 3.1 x 3.1-mm and is rated at 1200 V/10 A with a nominal RDS(on) of 160 mΩ. Operating junction temperature for both devices is rated at –55° to +150°C. The bare die alternatives help reduce the effects of the package-parasitic inductance. (Contact company for price and availability.)

By Paul O’Shea

Cree , Durham , NC
Information 800-533-2583
http://www.cree.com/pct