SiC MOSFETs operate from –40° to 200°C

SiC MOSFETs operate from –40° to 200°C

The QJD1210006 and QJD1210007 1,200-V, 100-A SiC MOSFET modules operate from –40° to 200°C junction temperatures. The SiC MOSFET-based modules, compared to similar Si IGBTs, have 38% lower conduction losses and 60% lower switching losses for a total power-loss reduction of 54% when operated at 20 kHz.

The modules are constructed in half-bridge configuration and feature a 50-A or 100 A SiC MOSFET per switch with two switches per model. Both styles feature all-silicon carbide Schottky diodes for reverse recovery. All components and interconnects are isolated from the heat sinking baseplate. (Sample pricing; QJD1210006, $9,000 each; QJD1210007, $9,200 each — available now.)

Powerex , Youngwood , PA
Kelly Bandieramonte 800-451-1415

http://www.pwrx.com