SiC MOSFETs operate from –40° to 200°C

SiC MOSFETs operate from –40° to 200°C

The QJD1210006 and QJD1210007 silicon carbide (SiC) MOSFET modules operate at –40° to 200°C, beyond those possible with silicon IGBT-based modules. The modules are constructed in half-bridge configuration and feature 100 A of SiC MOSFET per switch with two switches per model. When compared to a silicon IGBT module of equal rating, the SiC MOSFET-based module has 38% lower conduction losses and 60% lower switching losses for a total power-loss reduction of 54% when operated at 20 kHz.

Both style MOSFETs feature all silicon carbide Schottky diodes for reverse recovery. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Applications include forklifts, off-road electric vehicles, and power supplies. (QJD1210006 sample pricing, $9,000 each; QJD1210007 sample pricing, $9,200 each — available now.)

Powerex , Youngwood , PA
Information 800-451-1415

http://www.pwrx.com