SiC Power MOSFET: 1200 V, 9 A, 450 mΩ

The SCT2450KE is an n-channel SiC power MOSFET that features a low drain-source on-state resistance of 450 mΩ and a drain-source voltage of 1200 V. The device has a drain current of 10 A as well as total power dissipation of 85 W. Moreover, the SCT2450KE has a storage temperature range from -55 °C to 175 °C.

Features

• 450 mΩ on-resistance 
• Fast switching speed
• Fast reverse recovery
• Easy to parallel
• Simple to drive
• Pb-free lead plating; RoHS compliant

Application

• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives