SiC RF power device targets UHF radar apps

The model 0405SC-2200M device is a 2,200-W peak RF power SiC transistor suited for high-power UHF-band pulsed radar, including weather and long-range over-the-horizon radar applications. The transistor is a Generation 3 chip designed in a single-ended package for common-gate 2,200-W Class AB performance from 406 to 450 MHz.

The SiC transistor is a hermetically sealed package built with high-temperature gold metallization and wires. It features a 125-V operating voltage that reduces power supply size and dc current demand. It has a typical power gain >8 dB, a 300-µs pulse, drain efficiency 55% at 450 MHz, typical compression of 1.0 dB, and 10:1 VSWR-T. (Contact factory at sic@microsemi.com for pricing demo units available now,)

Microsemi , Irvine , CA
Information 949-221-7100
http://www.microsemi.com