SiC Schottky diode pushes the limits for energy conversion technologies
Newer forms of energy conversion technologies such as wind and solar power, and hybrid electric vehicles are constantly be created to improve energy conversion efficiency. Silicon carbide (SiC) Schottky diodes are a significant step toward reaching that goal. These SiC devices have no reverse current, and systems that use this device will run cooler and more efficiently compared to standard silicon designs. The elimination of the reverse recovery current in a power conversion system also helps reduce EMI.
The CPW2-1200S050 is a 1200 V/50 A Schottky diode that demonstrates a significant advance in manufacturing of SiC material processing. It’s so good that many providers of Schottky diodes use the raw wafer with this SiC substrate because the process has <1 defect/cm2 . It features the industry’s largest-area SiC die, with a die size of 8.2 x 4 mm. A significant benefit of the diode lies in its ability to switch fast, at <50 ns. It can also simplify PFC boost design by eliminating the need for snubbers thus shrinking component count, and reducing power losses. The design shows a positive temperature coefficient in the on-resistance and a negative temperature coefficient in the current gain enabling the devices to be connected in parallel without encountering current sharing problems.
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