SiC Schottky diodes features industry-best VF, recovery time

SiC Schottky diodes features industry-best VF, recovery time

The SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD) offer industry-leading low forward voltage and fast recovery time. It helps improve power conversion efficiency in applications such as PFC power supplies, solar panel inverters, uninterruptible power supplies, and air conditioners.

The SiC Si barrier diodes are 10-A rated parts with a VF of 1.5 V at 25°C and 1.6 V at 150°C. The VF reduces conduction loss while the 15-ns typ reverse-recovery time enables high-speed switching and minimizes switching loss. The total power dissipation ranges from 48 to 97 W for the five devices. (Ea/small OEM qty: SCS106AGC, $6.38; SCS108AGC, $7.70; SCS110AGC, $9.70; SCS112AGC, $13.48; SCS120AGC, $24.60 — available now.)

By Paul O’Shea

ROHM Semiconductor , San Diego , CA
Information 888-877-ROHM
http://www.rohmsemiconductor.com