SiC Schottky diodes offer leading efficiency

SiC Schottky diodes offer leading efficiency

The 650-V thinQ! SiC Schottky barrier diodes are based on thin wafer technology enabling improved thermal characteristics and a figure of merit 30% lower compared to its preceding SiC diode families. The devices provide improved efficiency in PFC and boost stages over all load conditions compared to all previous thinQ! generations. They are targeted for use in high-end server and telecom switched-mode power supplies, lighting applications, solar inverters and UPS systems.

The new family of SiC Schottky barrier diodes have a 650-V breakdown voltage and provides higher safety margins in applications like solar inverters. They provide robustness against surge currents and the use of new packages, such as TO-247 and ThinPAK. The diodes also provide reduced EMI, increased system reliability and cost/size savings due to reduced cooling requirements. (Samples are available now.)

By Paul O’Shea

Infineon Technologies , Milpitas , CA
Sales Office 866-951-9519
www.infineon.com