A 5th generation 1,200-V thinQ! SiC Schottky diodes feature best in class forward voltage of 1.4 V at 25°C and 1.7 V at 150°C, more than 100% improved surge current capability, and 0.6 K/W diode thermal resistance. These features result in significant efficiency improvement and target solar inverters, uninterruptible power supplies, three-phase SMPS, and motor drives.
The Gen 5 diodes use a new compact chip design, realized by a merged p-n junction in the Schottky cell-field. This enables a smaller differential resistance per chip area. As a result, it achieves a 30% reduction of the diode losses compared to the previous generation. The surge current capability is rated at up to 14 times the nominal current and helps eliminate a by-pass diode.
Advertisement
Learn more about Infineon Technologies
