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SiGe rectifiers deliver high efficiency, thermal stability

Combining the best attributes of Schottky and fast-recovery diodes, Nexperia’s SiGe rectifiers enable designers to use these parts in high-temperature and higher-efficiency designs

By Gina Roos, editor-in-chief

Nexperia has launched a range of AEC-Q101−approved silicon germanium (SiGe) rectifiers with 120-V, 150-V, and 200-V reverse voltages that combine the high efficiency of Schottky diodes with the thermal stability of fast-recovery diodes. Targeting automotive, communications infrastructure, and server markets, the 1-A to 3-A SiGe rectifiers can be used in high-temperature applications like LED lighting, engine control units, or fuel injection.

The extremely low-leakage devices (

Nexperia-SiGe-rectifiers-small

Nexperia said that by boosting the low forward voltage (Vf) and low Qrr, the SiGe rectifiers offer 10% to 20% lower conduction losses.

The PMEG SiGe devices (PMEGxGxELR/P) are housed in space-saving and thermally efficient CFP3 and CFP5 packages — the industry standard for power diodes. The devices provide reduced thermal resistance and optimized transfer of heat into the ambient environment thanks to copper clip-bonded packaging. In addition, pin-to-pin replacements of Schottky and fast-recovery diodes are possible when switching to SiGe parts, said Nexperia.

The first four AEC-Q101−qualified 120-V SiGe rectifiers are in mass production, and eight 150-V and 200-V devices are sampling now.

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