STMicroelectronics Extends NOR Flash Memory Subsystems Portfolio with First 512Mbit-based Solutions in 90nm Technology

STMicroelectronics Extends NOR Flash Memory Subsystems Portfolio with First 512Mbit-based Solutions in 90nm Technology

STMicroelectronics (NYSE: STM), among the world’s largest suppliers of NOR Flash devices and a leading developer of technologies based on fine-process geometries, today announced NOR Flash-based memory subsystems intended for the latest generation of mobile phones. The multi-chip subsystems combine ST’s new monolithic 256- and 512-Mbit NOR Flash devices with Pseudo-Static Random Access Memory (PSRAM) or Low-Power Synchronous Dynamic Random Access Memory (LPSDRAM) in a single package.

256- and 512-Mbit NOR-Flash create up to 1Gbit subsytems in Multi-Chip Package combinations with PSRAM or LPSDRAM in single BGA

Developed and manufactured in ST’s state-of-the-art 90nm process, the new NOR Flash memory subsystems offer faster code execution and more cost-effective pricing for 3G handheld applications.

The memory subsystems, available in multi-chip packages (MCP), come in a range of combinations. Driving up performance, ST’s new NOR Flash memories support read speeds of up to 133-MHz, 2X faster than currently available devices in the market. Additionally, the program throughput of up to 0.5MByte/s outperforms existing NOR Flash solutions by a factor of three. “The superior read speed of our new NOR Flash devices enable the fastest chipsets and allow fast code execution in advanced cellular platforms,” said Marco Dallabora, VP Memory Products Group STMicroelectronics.