By Gina Roos, editor-in-chief
Toshiba Electronic Devices & Storage Corporation has expanded its MOSFET family with a new series of 650-V power MOSFETs, aimed at server power supplies in data centers, solar (PV) power conditioners, uninterruptible power systems (UPS), and other industrial applications.
The 650-V TK040N65Z, the first device in the DTMOS VI series, supports continuous drain currents (ID) up to 57 A and 228 A when pulsed (IDP). A key feature is an ultra-low drain-source on-resistance RDS(ON) of 0.04 Ω (0.033 Ω typ.) which reduces losses in power applications. “The enhancement mode device is ideal for use in modern high-speed power supplies due to the reduced capacitance in the design,” said Toshiba.
Power supply efficiency is improved thanks to reductions in the key performance index/figure of merit (FoM) — RDS(ON) x Qgd — showing a 40% improvement in this metric over the previous DTMOS IV-H device. Toshiba said that this represents a significant gain in power supply efficiency in the region of 0.36%[1] — as measured in a 2.5-kW PFC circuit.
Available in an industry-standard TO-247 package, the TK040N65Z is in mass production. The device can be purchased online through Toshiba’s distribution network.
[1] As of June 2018, values measured by Toshiba (2.5-kW PFC circuit @ output power = 2.5 kW).
Advertisement
Learn more about Electronic Products Magazine
