The nemesis of electronics is heat as it accounts for more than 50% of all electronic failures, according to Adrian Wilson, director of Element Six Technologies Group. RF and high-voltage power device manufacturers can now look to GaN-on-diamond substrate combination to provide unmatched wafer thermal conductivity that will be able to deliver rapid, efficient, and cost-effective heat extraction.
Gallium nitride (GaN)-on-diamond wafers are proven to significantly outperform GaN-on-silicon carbide (SiC) in high-power RF devices.
GaN-on-diamond substrates exhibit a clear advantage over other substrate materials because its synthetic diamond dissipates heat up to five times more effectively than silicon or silicon carbide. This dissipation advantage, coupled with the close proximity of the diamond to the GaN, results in a dramatic reduction in the thermal resistance of GaN-on-diamond wafers. Lower thermal resistance enables simpler and less expensive thermal management systems and reliable operation in higher ambient temperatures, as well as more cost-effective RF devices. GaN-on-diamond technology offers advantages over all other available RF semiconductor materials, delivering superior system performance and cost, which makes it ideal for next-generation device technology in both defense and commercial applications.
The company looks to collaborate with manufacturers to tap into the unique properties of their synthetic diamond. For more about GaN-on-diamond wafers for advanced defense or commercial applications, visit www.e6.com/GaN
Advertisement
