700-V and 1200-V SiC Schottky barrier diodes target EVs
Microchip’s new generation of AEC-Q101-qualified 700-V and 1200-V SiC Schottky barrier diodes offer high reliability and ruggedness for electric
Tag: silicon carbide
RF power semiconductors for 5G shift to WBG materials
RF power semiconductors, using WBG materials, solve many technical challenges in 5G applications, bridging the gap with older, Si-based
